View NCV8445DR2G_8973387.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

? semiconductor components industries, llc, 2015 december, 2015 ? rev. 2 1 publication order number: ncv8445/d ncv8445 self protected high side driver with temperature shutdown and current limit the ncv8445 is a fully protected high?side driver that can be used to switch a wide variety of loads, such as bulbs, solenoids and other acuators. the device is interna lly protected fr om an overload condition by an active current limit and thermal shutdown. a diagnostic output reports on and off state open load conditions as well as thermal shutdown. features ? short circuit protection ? thermal shutdown with automatic restart ? cmos (3.3 v / 5 v) compatible control input ? open load detection in on and off state ? diagnostic output ? undervoltage and overvoltage shutdown ? loss of ground protection ? esd protection ? slew rate control for low emi switching ? very low standby current ? ncv prefix for automotive and other applications requiring unique site and control change requirements; aec?q100 qualified and ppap capable ? these devices are pb?free and are rohs compliant typical applications ? switch a variety of resistive, inductive and capacitive loads ? can replace electromechanical relays and discrete circuits ? automotive / industrial so?8 d suffix case 751 pin connections device package shipping ? ordering information marking diagram 18 5 3 4 (top view) gnd stat vd 7 6 2 out in nc vd out ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specification s brochure, brd8011/d. www. onsemi.com NCV8445DR2G soic?8 (pb?free) 2500 / tape & ree l v8445 = specific device code a = assembly location l = wafer lot y = year w = work week = pb?free package 1 8 v8445 alyw 1 8 operating voltage range r dson (max), t j = 25 c output current limit (min) i lim v s r on feature summary 6 6 to 36 45 a v m
ncv8445 www. onsemi.com 2 control logic undervoltage detection overvoltage detection regulated chargepump current limitation overtemperature detection gnd stat in out vd input buffer pre driver output clamping off?state open load detection on?state open load detection figure 1. block diagram pin description pin # symbol description 1 gnd ground 2 in logic level input 3 stat status output 4 n/c no connection 5 v d supply voltage 6 out output 7 out output 8 v d supply voltage
ncv8445 www. onsemi.com 3 maximum ratings rating symbol value unit min max dc supply voltage v d ?0.3 42 v peak transient input voltage (load dump 42.5 v, v d = 13.5 v, r load = 6.5 , iso7637?2 pulse 5) v peak 56 v input voltage v in ?8 8 v input current i in ?5 5 ma output current (note 1) i out ?6 internally limited a negative ground current ?i gnd ?200 ? ma status current i status ?5 5 ma power dissipation, tc = 25 c p tot 1.183 w electrostatic discharge (hbm model 100 pf / 1500 ) input status output v d 4 3.5 5 5 dc kv kv kv kv single pulse inductive load switching energy (note 2) (l = 1.8 mh, v bat = 13.5 v; i l = 8.75 a, t jstart = 150 c) e as 101.5 mj operating junction temperature t j ?40 +150 c storage temperature t storage ?55 +150 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device function ality should not be assumed, damage may occur and reliability may be affected. 1. reverse output current has to be limited by the load to stay within absolute maximum ratings and thermal performance. 2. not subjected to production testing. thermal resistance ratings parameter symbol max value unit thermal resistance junction?to?lead junction?to?ambient (min. pad) junction?to?ambient (1? square pad size, fr?4, 1 oz cu) r jl r ja r ja 72 110.8 105.6 c/w c/w c/w
ncv8445 www. onsemi.com 4 electrical characteristics (8 v d 36 v; ?40 c < t j < 150 c unless otherwise specified) rating symbol conditions value unit min typ max operating supply voltage v d 6 ? 36 v undervoltage shutdown v uv 3 5 6.5 v undervoltage restart v uv_rst 6.5 v overvoltage shutdown v ov 36 v on resistance r on i out = 2 a; t j = 25 c, v d > 8 v i out = 2 a, v d > 8 v 45 90 m standby current i d off state, v in = v out = 0 v, v d = 13.5 v on state; v in = 5 v, v d = 13.5 v, i out = 0 a 10 2.0 20 4.0 a ma output leakage current i l v in = v out = 0 v v in = 0 v, v out = 3.5 v v in = v out = 0 v, v d = 13.5 v ?12 10 5 5 a input characteristics input voltage ? low v in_low 1.25 v input current ? low i in_low v in = 1.25 v 1 a input voltage ? high v in_high 3.25 v input current ? high i in_high v in = 3.25 v 10 a input hysteresis voltage v hyst 0.25 v input clamp voltage v in_cl i in = 1 ma i in = ?1 ma 12 ?14 13 ?13 14 ?12 v switching characteristics turn?on delay time t d_on to 10% v out , v d = 13.5 v, r l = 6.5 5.0 30 55 s turn?off delay time t d_off to 90% v out , v d = 13.5 v, r l = 6.5 35 60 85 s slew rate on dv out / dt on 10% to 80% v out , v d = 13.5 v, r l = 6.5 0.1 0.4 0.8 v / s slew rate off dv out / dt off 90% to 10% v out , v d = 13.5 v, r l = 6.5 0.1 0.5 0.8 v / s output diode characteristics (note 3) forward voltage v f i out = ?1.3 a, t j = 150 c 0.6 v status pin characteristics status output voltage low v stat_low i stat = 1.6 ma 0.2 0.5 v status leakage current i stat_leakage v stat = 5 v 0.3 2.0 a status pin input capacitance c stat v stat = 5 v (note 3) 100 pf status clamp voltage v stat_cl i stat =1 ma i stat = ?1 ma 10 ?2.2 11 ?1.2 13 ?0.6 v protection functions (note 4) temperature shutdown (note 3) t sd 150 175 200 c temperature shutdown hysteresis (note 3) t sd_hyst 7 15 c output current limit i lim 8 v < v d < 36 v 6 13 20 a 6 v < v d < 36 v 6 11 20 a status delay in overload (note 3) t d_stat 20 s switch off output clamp voltage v clamp i out = 2 a, v in = 0 v, l = 6 mh v d ? 43 v d ? 46 v d ? 50 v 3. not subjected to production testing 4. to ensure long term reliability under heavy overload or short circuit conditions, protection and related diagnostic signals m ust be used together with a proper hardware/software strategy. if the devices operates under abnormal conditions this hardware/software solutions must limit the duration and number of activation cycles.
ncv8445 www. onsemi.com 5 electrical characteristics (8 v d 36 v; ?40 c < t j < 150 c unless otherwise specified) rating unit value conditions symbol rating unit max typ min conditions symbol diagnostics characteristics openload on state detection threshold i ol v in = 5 v 30 500 ma openload on state detection delay t d_ol_on i out = 0 a 100 200 s openload off state detection threshold v ol v in = 0 v 1.5 2.4 3.5 v openload detection delay at turn off t d_ol_off 100 300 s 3. not subjected to production testing 4. to ensure long term reliability under heavy overload or short circuit conditions, protection and related diagnostic signals m ust be used together with a proper hardware/software strategy. if the devices operates under abnormal conditions this hardware/software solutions must limit the duration and number of activation cycles. product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. figure 2. open load status timing (with external pull?up) figure 3. overtemperature status timing v in v stat t d_ol_on v out > v ol t d_ol_off i out < i ol t j > t j_tsd t d_stat t d_stat v stat v in 80% 90% 10% t t figure 4. switching timing diagram dv out / dt (on) t d(on) t d(off) v out dv out / dt (off) v in
ncv8445 www. onsemi.com 6 status pin truth table conditions input output status normal operation l h l h h h undervoltage l h l l x x overvoltage l h l l h h current limitation l h h l x x h (t j < t sd ) h (t j > t sd ) l overtemperature l h l l h l output voltage > v ol l h h h l h output current < i ol l h l h h l
ncv8445 www. onsemi.com 7 typical characteristics curves 4.0 4.4 4.6 4.8 5.0 5.2 5.4 6.0 ?50 0 50 100 150 v uv (v) temperature ( c) figure 5. undervoltage shutdown vs. temperature 37 38 39 40 41 42 43 44 45 temperature ( c) figure 6. overvoltage shutdown vs. temperature v ov (v) ?50 0 50 100 150 0 30 40 50 60 80 90 0 5 10 15 20 25 30 35 r ds(on) (m ) v d (v) figure 7. r ds(on) over temperature and battery 25 c ?40 c 150 c 0 5 10 20 25 30 40 45 010203040 i off ( a) v bat (v) figure 8. off state standby current leakage vs. v bat and temperature ?40 c 25 c 150 c 0 1 2 3 4 5 6 010203040 i l ( a) v bat (v) figure 9. output leakage vs. v bat and temperature, v out = 0 v ?40 c 25 c 150 c temperature ( c) v in thresh (v) ?50 0 50 100 150 4.0 3.5 3.0 2.5 2.0 1.5 1.0 figure 10. v in threshold high vs. temperature 4.2 5.6 5.8 15 35 125 c 70 20 10
ncv8445 www. onsemi.com 8 typical characteristics curves 1.0 1.5 2.0 2.5 3.0 3.5 4.0 temperature ( c) v in low (v) ?50 0 50 100 150 figure 11. v in threshold low vs. temperature 1 2 3 4 5 6 7 8 9 10 ?50 0 50 100 150 temperature ( c) figure 12. input current vs. temperature i in current ( a) i in @ 1.25 v i in @ 3.25 v i in @ 5 v 10.0 10.5 11.0 11.5 12.0 12.5 13.0 13.5 14.0 temperature ( c) v in_cl (pos) (v) figure 13. input clamp voltage (positive) vs. temperature ?50 0 50 100 150 ?10.0 ?10.5 ?11.0 ?11.5 ?12.0 ?12.5 ?13.0 ?13.5 ?14.0 ?50 0 50 100 150 temperature ( c) figure 14. input clamp voltage (negative) vs. temperature v in_cl (neg) (v) 0 5 10 15 20 30 35 40 45 50 010203040 t on ( s) v bat (v) figure 15. turn on delay time vs. v bat and temperature ?40 c 25 c 150 c 0 10 20 30 40 50 60 70 0 10203040 ?40 c 25 c 150 c t off ( s) v bat (v) figure 16. turn off delay time vs. v bat and temperature 25
ncv8445 www. onsemi.com 9 typical characteristics curves ?40 c 150 c 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 10203040 ?40 c 25 c 150 c dv out / dt (on) ( s) v bat (v) figure 17. slew rate on vs. v bat and temperature 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 10203040 t on ( s) v bat (v) figure 18. slew rate off vs. v bat and temperature 25 c 0.40 0.45 0.50 0.55 0.60 0.65 0.70 0.75 temperature ( c) figure 19. forward voltage (@ ?1.3 a) vs. temperature v f (v) ?50 0 50 100 150 0 50 100 150 200 250 300 0 10203040 ?40 c 25 c 150 c v stat_low (mv) v d (v) figure 20. stat low voltage vs. v d 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 temperature ( c) figure 21. status leakage current vs. temperature i stat_leakage ( a) ?50 0 50 100 150 10.0 10.5 11.0 11.5 12.0 12.5 13.0 ?50 0 50 100 150 temperature ( c) figure 22. status clamp voltage (positive) vs. temperature v (pos) (v) 1.8 2.0 0.35 0.30
ncv8445 www. onsemi.com 10 typical characteristics curves 0 ?1.0 ?2.0 ?3.0 ?4.0 ?50 0 50 100 150 temperature ( c) figure 23. status clamp voltage (negative) vs. temperature status clamp (neg) (v) 5 7 9 11 13 19 ?50 0 50 100 150 temperature ( c) figure 24. current limit vs. temperature v d = 13.5 v i lim (a) 43 44 45 46 47 49 01020304050 v d (v) figure 25. turn off output clamp voltage vs. v d and temperature v clamp (v) ?40 c 25 c 150 c 0 50 100 150 200 250 300 ?50 ?30 ?10 10 30 50 70 90 110 130 150 temperature ( c) figure 26. on state open load detection vs. temperature v d = 13.5 v i ol (ma) 1.5 1.7 1.9 2.1 2.3 2.5 2.7 2.9 0 5 10 15 20 25 30 35 40 v d (v) figure 27. off state ol detection threshold vs. v d and temperature v ol (v) ?40 c 25 c 150 c 1 10 10 100 l (mh) figure 28. single?pulse maximum switch?off current vs. load inductance il max (a) 25 c 150 c ?0.5 ?1.5 ?2.5 ?3.5 15 17 48
ncv8445 www. onsemi.com 11 typical characteristics curves 10 100 1000 10 100 l (mh) figure 29. single?pulse maximum switch?off current vs. load inductance e max (mj) 25 c 150 c iso 7637?2: 2004(e) pulse test results iso 7637?2:2004(e) test levels delays and test pulse i ii iii iv impedance 1 ?25 v ?50 v ?75 v ?100 v 2 ms, 10 2a +25 v +50 v +37 v +50 v 0.05 ms, 10 3a ?25 v ?50 v ?112 v ?150 v 0.1 s, 50 3b +25 v +50 v +75 v +100 v 0.1 s, 50 4 ?4 v ?5 v ?6 v ?7 v 5 s, .01 5 (load dump) +26.5 v +46.5 v +66.5 v +86.5 v 400 ms, 2 iso 7637?2:2004(e) test results test pulse i ii iii iv 1 c c c c 2a c c c c 3a c c c c 3b c c c c 4 c c c c 5 (load dump) c e e e class functional status a all functions of a device perform as designed during and after exposure to disturbance. b all functions of a device perform as designed during exposure. however,one or more of them can go beyond specified tolerance. all functions return automatically to within normal limits after exposure is removed. memory functions shall remain class a. c one or more functions of a device do not perform as designed during exposure but return automatically to normal operation after exposure is removed. d one or more functions of a device do not perform as designed during exposure and do not return to normal operation until exposure is removed and the device is reset by simple e one or more functions of a device do not perform as designed during and after exposure and cannot be returned to proper operation without replacing the device.
ncv8445 www. onsemi.com 12 status input load voltage normal operation status input load voltage undervoltage status input overvoltage undefined load voltage status input open load with external pull?up load voltage load voltage status input open load without external pull?up overtemperature load voltage status input figure 30. waveforms v d v cc t j t r v ol t tsd v d > v ov v uv_hys v d < v ov v uv
ncv8445 www. onsemi.com 13 reverse battery protection load stat gnd 5 v input v out v d r gnd d gnd +? figure 31. application diagram reverse battery protection an external resistor r gnd is required to adequately protect the device from a reverse battery event. the resistor value can be calculated using the following two formulas. 1. r gnd 600 mv / (i d (on) max) 2. r gnd (-v d ) / (-i gnd ) maximum (-i gnd) current, which is the reverse gnd pin current, can be found in the maximum ratings section. several high side devices can share same the reverse battery protection resistor. please note that the sum of (i d (on) max) of all devices should be used to calculate r gnd value. if the microprocessor ground is not common with the device ground, r gnd will produce a voltage of fset ((i d (on) max) x r gnd ) with respect to the in and stat pins. this offset will be increased when more than one device shares the resistor. power dissipation during a reverse battery event is equal to: p d v d 2 r gnd in the case of high power dissipation due to several devices sharing r gnd , it is recommended to place a diode d gnd in the ground path as an alternate reverse battery protection method. when driving an inductive load, a 1 k resistor should be placed in parallel with the d gnd diode. this method will also produce a voltage offset of ~600 mv with respect to the in and stat pins. this diode can also be shared amongst several high side devices. this voltage offset will vary if d gnd is shared by multiple devices.
ncv8445 www. onsemi.com 14 v d v out stat gnd input v pull ?up r pull ?up r l ol i vbat 5v figure 32. open load detection in off state off state open load detection off state open load detection requires an external pull-up resistor (r pull-up ) connected between v out pin and a positive supply voltage (v pull-up ). the external r pull-up resistor value should be selected to ensure that a false off state ol condition is not detected when the load (r l ) is connected. a v out voltage above the v ol_min (openload off state detection threshold) minimum value with the load (r l ) connected needs to be avoided. the following formula shows this relationship: v out v pull up r l r pull up r l v ol_min in addition to ensuring the selected r pull-up resistor value does not cause a false off state ol detection condition when the load is connected, the r pull-up must also not cause the off state ol to miss detecting an ol condition when the load is disconnected. a v out voltage below the v ol_max (openload off state detection threshold) maximum value with the load (r l ) disconnected needs to be avoided. the following formula shows this relationship: r pull up v pull up v ol_max ol 1 ol 1 i l output leakage with v out 3.5 v because i d (off) may significantly increase if v out is pulled high (up to several ma), r pull-up resistor should be connected to a supply that is switched off when the module is in standby.
ncv8445 www. onsemi.com 15 0.01 0.1 1 10 100 1000 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1 00 pulse time (s) r(t), ( c/w) single pulse duty cycle = 0.5 0.2 0.1 0.05 0.02 0.01 figure 33. transient thermal impedance copper heat spreader area (mm 2 ) 60 80 100 120 140 160 180 0 200 400 600 800 1000 ja ( c/w) 1.0 oz 2.0 oz figure 34. r ja vs copper area
ncv8445 www. onsemi.com 16 package dimensions soic?8 nb case 751?07 issue ak seating plane 1 4 5 8 n j x 45 k notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 3. dimension a and b do not include mold protrusion. 4. maximum mold protrusion 0.15 (0.006) per side. 5. dimension d does not include dambar protrusion. allowable dambar protrusion shall be 0.127 (0.005) total in excess of the d dimension at maximum material condition. 6. 751?01 thru 751?06 are obsolete. new standard is 751?07. a b s d h c 0.10 (0.004) dim a min max min max inches 4.80 5.00 0.189 0.197 millimeters b 3.80 4.00 0.150 0.157 c 1.35 1.75 0.053 0.069 d 0.33 0.51 0.013 0.020 g 1.27 bsc 0.050 bsc h 0.10 0.25 0.004 0.010 j 0.19 0.25 0.007 0.010 k 0.40 1.27 0.016 0.050 m 0 8 0 8 n 0.25 0.50 0.010 0.020 s 5.80 6.20 0.228 0.244 ?x? ?y? g m y m 0.25 (0.010) ?z? y m 0.25 (0.010) z s x s m 1.52 0.060 7.0 0.275 0.6 0.024 1.270 0.050 4.0 0.155 mm inches scale 6:1 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* on semiconductor and the are registered trademarks of semiconductor components industries, llc (scillc) or its subsidia ries in the united states and/or other countries. scillc owns the rights to a number of pa tents, trademarks, copyrights, trade secret s, and other intellectual property. a listin g of scillc?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any product s herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any part icular purpose, nor does sci llc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typi cal? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating param eters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgic al implant into the body, or other applications intended to s upport or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer s hall indemnify and hold scillc and its officers , employees, subsidiaries, affiliates, and dist ributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufac ture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 ncv8445/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative

▲Up To Search▲

Price & Availability of NCV8445DR2G

	To Download NCV8445DR2G Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .